publication 2013 Inhibition of Te surfactant effect on surface morphology of heavily Te-doped GaAs Pages 30-35 more of publication Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing This paper reports on experimental and theoretical investigation of atyical temperature-dependent photoluminescence properties of InAs quantum dots in close proximity to InGaAs strain-relief… by DOI: 10.1016/j.jallcom.2015.09.231 2016 Chemical beam epitaxy growth and optimization of InAs/GaAs quantum dot multilayers by J. Zribi, B. Ilahi, D. Morris, V. Aimez, R. Ares 2013 Inhibition of Te surfactant effect on surface morphology of heavily Te-doped GaAs by B Paquette, B Ilahi, V Aimez, R Ares 2013