INVESTIGATION OF THE IDEALITY FACTOR FOR NON-IDEAL DIODES
Numerical calculation of the ideality factor of non ideal diodes has been performed. The diode cell was
modulated in terms of a parallel connected double diode circuit model containing parasitic shunt and series
resistance effects. The influence of the series resistance on the diode ideality factor has been investigated. At fixed
temperature, the ideality factor remains nearly constant for a large range of the series resistance and then it starts
to decrease at resistance around nearly 105 Ω. The results indicated that the ideality factor reaches unity at
currents 0.5 μA, 2.5 μA, 3.9 μA and 4.2 μA at temperatures 400 K, 300 K, 100 K and 77 K respectively. The
influence of the temperature on the ideality factor has been analyzed. When the temperature increases the ideality
factor decreases exponentially with a level depends on the fixed diode current. In general, the values of the ideality
factor are small at 300 K and 400 K while these values are high at 100 K. The behavior of the ideality factor is
investigated when the voltage is changed while the current of the diode is kept constant. When the voltage
increases the ideality factor increases linearly.
Numerical calculation of the ideality factor of non ideal diodes has been performed. The diode cell was
modulated in terms of a parallel connected double diode circuit model containing…
The aim of this study is studying the influence of the donor concentration and temperature on the static