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د. محمد بن عبدالعزيز بن محمد الزامل

Associate Professor

عضوهيئة تدريس بكلية العلوم - قسم الفيزياء والفلك

كليات العلوم
أأ65
publication
Journal Article
2013

Study of Static Dielectric Constant of n-Type InAs

The aim of this study is studying the influence of the donor concentration and temperature on the static

dielectric constant () of heavily doped n-type InAs semiconductor. The variation of donor concentration caused an exponential increase of at high values of donor density. Our calculations indicated that has no meaning at concentration above 3×1016 cm3. Above this value the static dielectric constant diverges so that the polarization catastrophe occurred. The static dielectric constant dependence of resistivity shows that at high resistivity the static dielectric constant appears to be nearly constant and equals the value 14.5. This value is equal to the static

dielectric constant of InAs host semiconductor without doping. One can expect a divergence of at very low resistivity values at which polarization catastrophe can happen.

Publication Work Type
Research
Volume Number
5
Issue Number
2
Magazine \ Newspaper
Journal of Applied Sciences, Engineering and Technology
Pages
481-484
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The aim of this study is studying the influence of the donor concentration and temperature on the static

2013