EE 310
- Text Book: Microelectronic Circuits, by Sedra/ Smith, 5ed edition 2004, Oxford University Press.
- Grading Policy: Grades will be distributed as follows;
Two med-term exams :
- First Midterm Exam 20%
- Second Midterm Exam 20%
- Class/Home work 10%
- Drop Quizzes 10%
- Final Exam 40%
- Attendance: A student with an absence of 25% or greater by the last day of classes will not be allowed to attend the final exam. Tutorials will be included in the absence rate.
- Course Content:
Introduction
- Semiconductors: how different from metals and insulators
- Intrinsic, N-type, and P-type Semiconductors
- Generation, Recombination, and Energy band model
- Conductivity and resistivity
- Current mechanisms: diffusion and drift currents
P-N Junction Diodes
- Physical Operation of Diodes
- Terminal (I-V) characteristics of Junction Diodes
- The Ideal Diode and Constant-Voltage Models
- Diode Applications: Logic gates, Rectifiers, Photodiodes, Solar Cells, LEDs, Zener, and Laser Diodes.
- Analysis of Diode Circuits
- The Small-Signal Model and its Application
Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs)
- Introduction: MOSFET and the Digital World
- The Enhancement-Type MOSFET (E-MOSFET): Device Structure and Physical Operation
- Current-Voltage Characteristics for E-MOSFET
- The Depletion-Type MOSFET (D-MOSFET): Device Structure and Physical Operation
- Current-Voltage Characteristics for D-MOSFET
- MOSFET Circuits at DC
- The MOSFET as an Amplifier and as a Switch
- Small-Signal Operation and Models
- The NMOS and CMOS Digital Logic Inverters
Bipolar Junction Transistors
- Physical Structures Modes of Operation, and Types
- Graphical Representation of Transistor Characteristics
- Analysis of Transistor Circuits at DC
- The Transistor as an Amplifier
- Small-Signal Equivalent Circuit Models
- Graphical Analysis
- The Transistor as a Switch
Four Layers (three junctions) Devices: Thyristors
- Structure
- I-V characteristics