EE 310

Intrinsic and doped semiconductors, drift and diffusion currents. PN junction diode: basic structure, I-V characteristics, large and small-signal models. Bipolar junction transistor ( BJT): basic structure, modes of operation, dc biasing, dc and small-signal models, single stage BJT amplifiers. structure and operation of enhancement and depletion MOSFETs, I-V characteristics, dc biasing.