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سفر بن ساعد الغامدي

Associate Professor

عضو هيئة تدريس متقاعد

كلية العلوم
مبنى 4 الدور الارضي أأ17
المنشورات
مقال فى مجلة
2021

Influence of Gamma-ray exposure and dose dependent characteristics of (n)PbS–(p)Si hetero-structure

Ali, S. Aldawood, S. S. AlGamdi, S. A. Al Salman, M. S. AlGarawi, Turki S. ALKHURAIJI, and Syed Mansoor . 2021

ABSTRACT
An (n)PbS–(p)Si hetero-structure was developed by preparing the lead sulfide
(PbS) nanostructure thin films deposited on p-type Si wafer using the successive
ionic layer adoption and reaction (SILAR) method. To investigate the radiation
detection capability of (n)PbS–(p)Si hetero-structure. For this purpose, nanostructure,
photoluminescence, optical bandgap and I–V characteristic have been
examined with various c-ray dose 0, 25, 50 and 75 kGy. X-ray diffraction of as
deposited PbS comparing to the irradiated samples suggested that the crystalline
is improved with the c-ray up to 50 kGy dose. The morphology studies
showed that the average sizes increased from 55 to 105 nm with increasing the
incident c-ray dose level and decreased with further increase of dose. Energy
dispersive X-ray (EDX) analysis confirmed the elemental composition of the as
deposited PbS thin films. The reflectance of the (n)PbS–(p)Si hetero-structure in
the ultraviolent–visible–near infrared reflectance (UV–Vis–NIR) region reduced
about 40% compared to as deposited sample. The band edge shifted to longer
wavelengths with increasing dose level to 50 kGy, and the reverse trend is
observed at 75 kGy dose. Photoluminescence (PL) spectra revealed that the
(n)PbS–(p)Si hetero-structure received the lowest recombination rate at 50 kGy.
The rectifying current–voltage (I–V) characteristics revealed impact of the c-ray
irradiation dose on the hetero-structure electrical parameters. The rectifying
ratio and turn-on voltage reduced from 22.3 to 7.4 at 5 V, and 1.25–0.5 V with cray
irradiation, respectively. All ideality factors of as deposited and irradiated
(n)PbS–(p)Si hetero-structure are greater than 4. The barrier height, series
resistance exhibited minimum values (0.49 eV, 1.47 kX) and the largest saturation
current 1.69 9 10–4 A, at 50 kGy.

رقم المجلد
32
مجلة/صحيفة
J Mater Sci: Mater Electron (2021)
الصفحات
11616–11627
مزيد من المنشورات
publications
2022
تم النشر فى:
Accepted in: Journal of Materials Science: Materials in Electronics (JMSE)
publications
بواسطة Syed Mansoor Ali1 , S. Aldawood1,*, M. S. AlGarawi1 , S. S. AlGhamdi1 , H. Kassim1 , and A. Aziz1
2022
تم النشر فى:
J Mater Sci: Mater Electron (2022) 33:18982–18990
publications
بواسطة S. Aldawood ⇑ , Syed Mansoor Ali, Saif M.H. Qaid, Hamid M. Ghaithan, M.S. AlGarawi, Abdullah S. Aldwayyan, H. Kassim, Aziz A. Aziz, S.S. AlGamdi
تم النشر فى:
Journal of King Saud University – Science 34 (2022) 101802