Chapter three

Section

Page number

Introduction

3.1

123-131

3.2

131-137

3.3

137-155

3.4

155-163

3.5

163-168 and 170

Chapter four

Introduction

4.1

222-223

4.2

223-232

4.3

232-233

4.4

234-238

4.5

238-241

4.6

241-253

4.7

253-259

4.8

259-261, 262-264 and 322-323

4.9

272-276

4.12

295-303

Chapter five

Introduction

5.1

354-361 and 364-365

5.2

366-374

5.3

376-380

5.4

380-388

5.5

389-397

5.11

447

Grading

First midterm

20

Second midterm

20

Homeworks

10

Quizzes

10

Final

40

Course outcome

abet (a-k)

1

Students will demonstrate an understanding of basic semiconductor theory, including the concepts of resistivity, conductivity, intrinsic semiconductor, doping, majority and minority carriers, energy band diagram, drift and diffusion

a, e

2

Students will demonstrate an understanding of pn junction operation, biasing, and current.

a, e

3

Students will demonstrate an understanding of nonlinear devices through ideal diode behavior

a

4

Students will demonstrate an understanding of the use of on-off behavior of the diode on some applications such as rectifiers and logic gates. 

a, c,e

Students will demonstrate an understanding of the internal semiconductor characteristics of diodes and BJT/MOSFET transistors

a,e

5

Draw the I-V characteristics of a PN junction diode, BJT and MOSFET.

a

6

Indicate different regions of operation of a diode and operating modes of BJTs and MOSFETs.

a

7

Students can apply electric network theory to semiconductor circuits: diodes, transistors, amplifiers and diode logic gates.

a, e, k

8

Students will be able to distinguish bias from signal

a, e, k

9

Students will be able to analyze and design basic diode and transistor circuits for large and small signal operation.

a,c,e,k

10

Student will demonstrate a basic understanding of the application of the transistor ( BJT & MOSFET ) as an amplifier or switche.

a,c,e,k