Dr. Nacer Debbar

Work recognized worldwide, with over 338 citations from most of the recognised journals in the field of electronics and applied physics. 

1. “Investigation of the Dark Electrical Characteristics of the Lateral Metal-Semiconductor-Metal Photodetectors Using Two-Dimensional Numerical Simulation”, N. Debbar, submitted for publication to Int. J. of Electronics, May 17 2008. 
2. “Material Properties and Clustering in Molecular Beam Epitaxial  In_0.52A1_0.48As and In_1-x-yGa_xAl_yAs”, W.P. Hong, A. Chin, N. Debbar, J. Hinckley, P.K. Bhattacharya and J. Singh, J. Vac. Science and Technology, B5 (3), pp 800-801 (1987).
3. “Enhancement in Excitonic Absorption due to Overlap in Heavy-Hole and Light-Hole Excitons in GaAs/InAlGaAs Quantum Well Structures”, G.P. Kothiyal, S.C. Hong, N. Debbar, P K. Bhattacharya and J. Singh, Applied Physics Letters, 51, pp 1091-1093 (1987).
4. “Carrier Dynamics in Quantum Wells Behaving as Giant Traps”, N. Debbar and P.K. Bhattacharya, Journal of Applied Physics, 62, pp 3845-3847 (1987).
5. “Theoretical and Experimental Studies of Optical Absorption in Strained Quantum Well Structures for Optical Modulators”, S.C. Hong, G.P. Kothiyal, N. Debbar, P.K. Bhattacharya and J. Singh, Physical Review, B37, pp 878-885 (1988).
6. “Thermal Emission and Capture from Quantum Wells- Analogy with Deep Traps”, N. Debbar, D. Biswas, P.K. Bhattacharya and J.E. Oh, Inst Phys Conf Ser (96), pp 299-302 (1989).
7. “Coupled GaAs/AlGaAs Quantum Well Electroabsorption Modulators for Low Electric Field Optical Modulation”, N. Debbar, S.C. Hong, J. Singh and P.K. Bhattacharya, Journal of Applied Physics, 65, pp 383-385 (1989).
8. “A Critical Examination of the Molecular Beam Epitaxial Growth of In_xGa_1-xAs/GaAs Strained Quantum Well Structures”, J. Pamulapati, J.E. Oh, N. Debbar and P.K. Bhattacharya, Journal of Applied Physics, 65, 1361-1363 (1989).
9. “Conduction Band Offsets in Pseudomorphic In_xGa_1-xAs/Al_0.2Ga_0.8As Quantum Wells (0.07 ≤ x ≤ 0.18) Measured by Deep Level Transient Spectroscopy”, N. Debbar, D. Biswas, and P.K. Bhattacharya, Physical Review, B40, pp 1058-1063 (1989).
10. “Band Offsets in GaAs/Ga_0.51In_0.49P Heterostructures Grown by MOCVD”, P.K. Bhattacharya, N. Debbar, D. Biswas, M. Razeghi, M. Defour and F. Omnes, Inst Phys Conf Ser (106), pp 351-356 (1990).
11. “Recombination and Tunneling Dynamics in Square and Coupled Quantum Wells”, N. Debbar, D. Biswas, P.K. Bhattacharya and J. Singh, Inst Phys Conf Ser (106), pp 843-848 (1990).
12. “Conduction and Valence Band Offsets in GaAs/Ga_0.51In_0.49P Single Quantum Wells Grown by MOCVD”, D. Biswas, N. Debbar, P.K. Bhattacharya, M. Razeghi, M. Defour and F. Omnes, Applied Physics Letters, 56, pp 833-835 (1990).
13. “High Speed InP/GaInAs Metal-Semiconductor-Metal Photodetectors Grown by Chemical Beam Epitaxy”, N. Debbar, A. Rudra, J.F. Carlin and M. Ilegems, Applied Physics Letters, 65, pp 228-230 (1994).
14. “High-Speed Monolithically Integrated MSM-FET Photoreceiver on GaAs/InGaAs Strained Layer Superlattice”, N. Debbar, Int. J. of Electronics, 83, pp 325-332 (1997).
15. “High Performance InGaAs/GaAs Strained Layer Superlattice Photodetectors Compatible with GaAs MESFET Technology”, N. Debbar, Journal of King Saud University (Engineering Sciences), 10, pp 105-113 (1998).
16. “Numerical Simulation of the I-V Characteristics of Heterojunctions Including Thermionic Emission Mechanisms”, N. Debbar, B. Al-Mashary, Proceeding of the 10^th International Conference on Microelectronics, pp 123-126, December 14-16, Monastir, Tunisia, (1998).
17. “Numerical Investigation of the Effects of Graded Layers on the Performance of AlGaAs/GaAs Heterojunction Bipolar Transistors”, N. Debbar and H. Al-Hokail, Int. J. of Electronics. 87, pp 1153-1162, (2000).
18. “Estimation of Band-Gap Offsets of Heterojunctions Using J-V-T Characteristics”, N. Debbar and B. Al-Mashary, Proceeding of the 12^th International Conference on Microelectronics, pp 177-180, October 31-November 2, Teheran, Iran, (2000).
19. “Two-Dimensional Numerical Simulation of Metal-Semiconductor-Metal Photodetector Structures”, N. Debbar, Proceeding of the 14^th International Conference on Microelectronics, pp 269-272, Beirut, Lebanon, December 2002.
20. “Numerical Simulation of GaAs/AlGaAs Heterojunctions including Interface States and Thermionic Emission”, N. Debbar, B. Al-Mashary, Int. J. of Modeling and Simulation, Vol. 23, No 2, pp 103-108, (2003).
21. “Effect of the Optical Power and Active Layer Thickness on the Photocurrent in Metal-Semiconductor-Metal detectors”, N. Debbar, A. Telba and M. Alkanhal, Proceeding of the 10^th IEEE International Conference on Electronics, Circuits and Systems, pp 762-765, Sharjah, UAE, December (2003).